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Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces. - Abstract - Europe PMC
Gallium Nitride and Silicon Carbide Power Devices Light-emitting diode Semiconductor, Gan, text, logo, lED Lamp png | PNGWing
A Seriously High-Power Gallium Nitride Diode | Engineering.com
Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech Opinion - Charged EVs
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
GaN FAQs | GaN Systems
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
GaN-Based Schottky Diode | IntechOpen
Figure 2 from 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy | Semantic Scholar
OSA | Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications: Journal of Vacuum Science & Technology B: Vol 34, No 2
I-V characteristics of GaN Schottky diode at different temperatures in... | Download Scientific Diagram
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Panasonic claims 7.6kA/cm² for a GaN diode
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. - Abstract - Europe PMC