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Hydrogen sensors using nitride-based semiconductor diodes: the role of  metal/semiconductor interfaces. - Abstract - Europe PMC
Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces. - Abstract - Europe PMC

Gallium Nitride and Silicon Carbide Power Devices Light-emitting diode  Semiconductor, Gan, text, logo, lED Lamp png | PNGWing
Gallium Nitride and Silicon Carbide Power Devices Light-emitting diode Semiconductor, Gan, text, logo, lED Lamp png | PNGWing

A Seriously High-Power Gallium Nitride Diode | Engineering.com
A Seriously High-Power Gallium Nitride Diode | Engineering.com

Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech  Opinion - Charged EVs
Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech Opinion - Charged EVs

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N  Schottky Diodes | HTML
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure  of high electron mobility transistors | Scientific Reports
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports

Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... |  Download Scientific Diagram
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram

GaN FAQs | GaN Systems
GaN FAQs | GaN Systems

Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si

GaN-Based Schottky Diode | IntechOpen
GaN-Based Schottky Diode | IntechOpen

Figure 2 from 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by  Molecular Beam Epitaxy | Semantic Scholar
Figure 2 from 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy | Semantic Scholar

OSA | Magnesium ion-implantation-based gallium nitride p-i-n photodiode for  visible-blind ultraviolet detection
OSA | Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances  (RSC Publishing)
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency  applications: Journal of Vacuum Science & Technology B: Vol 34, No 2
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications: Journal of Vacuum Science & Technology B: Vol 34, No 2

I-V characteristics of GaN Schottky diode at different temperatures in... |  Download Scientific Diagram
I-V characteristics of GaN Schottky diode at different temperatures in... | Download Scientific Diagram

Increasing GaN Schottky diode breakdown voltage with recessed double-field  plate anode
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode

Panasonic claims 7.6kA/cm² for a GaN diode
Panasonic claims 7.6kA/cm² for a GaN diode

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N  Schottky Diodes | HTML
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML

Improving Ni/GaN Schottky diode performance through interfacial passivation  layer formed via ultraviolet/ozone treatment - ScienceDirect
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode  (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. -  Abstract - Europe PMC
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. - Abstract - Europe PMC

Obliterating dynamic on-resistance degradation - News
Obliterating dynamic on-resistance degradation - News

Cutting leakage in gallium nitride vertical diodes on silicon
Cutting leakage in gallium nitride vertical diodes on silicon

IQE, imec make 650V GaN-on-Si diodes on 200mm wafers
IQE, imec make 650V GaN-on-Si diodes on 200mm wafers